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1 July 2002 Simulation model of in-plane distortion in EUVL mask during chucking
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The in-plane distortion (IPD) arising from the stress in the films on an EUVL mask in a flattened state was calculated using a newly devised simulation model based on 2D planar stress theory. One cause of IPD is the stress gradients in the multilayer and absorber films. Since there is no stress gradient in a large absorber pattern with uniform internal stress, the placement error was found to be extremely small in this case. Furthermore, concave or convex regions occur int the free space areas not covered with absorber film. The magnitude of the change in surface height in the detph-wise direction is 0.4 nm for an absorber stress of +/- 500 Mpa. It was found that the change in surface height could be suppressed by reducing the absorber stress. In order to improve the placement accuracy of EUVL masks, it is desirable to deposit films with a uniform internal stress during mask fabrication.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Chiba, Kazuya Ota, Eiichi Hoshino, Minoru Sugawara, Taro Ogawa, and Shinji Okazaki "Simulation model of in-plane distortion in EUVL mask during chucking", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002);

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