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1 July 2002 Studies of EUV contamination mitigation
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Abstract
Carbon contamination removal was investigated using remote RF-O2, RF-H2, and atomic hydrogen experiments. Samples consisted of silicon wafers coated with 100 Angstrom sputtered carbon, as well as bare Si-capped Mo/Si optics. Samples were exposed to atomic hydrogen or RF plasma discharges at 100 W, 200 W, and 300 W. Carbon removal rate, optic oxidation rate, at-wavelength (13.4 nm) peak reflectance, and optic surface roughness were characterized. Data show that RF- O2 removes carbon at a rate approximately 6 times faster RF- H2 for a given discharge power. However, both cleaning techniques induce Mo/Si optic degradation through the loss of reflectivity associated with surface oxide growth for RF-O2 and an unknown mechanism with hydrogen cleaning. Atomic hydrogen cleaning shows carbon removal rates sufficient for use as an in-situ cleaning strategy for EUVoptics with less risk of optic degradation from overexposures than RF-discharge cleaning. While hydrogen cleaning (RF and atomic) of EUV optics has proven effective in carbon removal, attempts to dissociate hydrogen in co-exposures with EUV radiation have resulted in no detectable removal of carbon contamination.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samual Graham Jr., Michael E. Malinowski, Chip Steinhaus, Philip A. Grunow, and Leonard E. Klebanoff "Studies of EUV contamination mitigation", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472319
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