Paper
16 July 2002 Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM
Guy Eytan, Ophir Dror, Laurent Ithier, Brigitte Florin, Zakir Lamouchi, Nadine Martin
Author Affiliations +
Abstract
In this work we describe a simple and easy way to implement line edge roughness measurement using the Applied Materials VeraSEM 3D CD SEM. The outcomes of the measurement are the roughness amplitude and its main spatial wavelength components. In the first step we test this method on an e-beam resist wafer with known roughness and correlate the results with AFM measurements. In the second step, we measured the line roughness of a 193 nm resist FEM wafer. It was found that negative defocus is characterized by long wavelength components while positive defocus shows line roughness at all wavelengths.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guy Eytan, Ophir Dror, Laurent Ithier, Brigitte Florin, Zakir Lamouchi, and Nadine Martin "Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473473
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Cited by 8 scholarly publications.
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KEYWORDS
Spatial frequencies

Lithium

Semiconducting wafers

3D metrology

Critical dimension metrology

Inspection

Line edge roughness

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