Paper
16 July 2002 Behavior of chemically amplified resist defects in TMAH solution
Yuko Ono, Osamu Miyahara, Yukio Kiba, Junichi Kitano
Author Affiliations +
Abstract
As semiconductor design rules become increasingly complex, there is growing demand for a reduction in defects in lithography processes, and the process that contributes most to such defects is believed to be the developing process. The control of defects occurring in chemically amplified resist due to changes in the resist structure has been growing in complexity. Today, when the exposure source is about to undergo a transition from KrF (248 nm) to ArF (193 nm), the controlled objects in defect inspection decrease in size, becoming smaller than the particle size that can be handled by inspection machines. For defect control against the background of the increasing miniaturization anticipated in the future, it will be necessary to gain an understanding of the behavior of ultra micro defects contained in developers. This report concerns the consideration of defect behavior in developing fluid resulting from the quantification of defects occurring due to resist dissolution in the developing fluid, and from defect behavioral analysis performed on the developing fluid.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuko Ono, Osamu Miyahara, Yukio Kiba, and Junichi Kitano "Behavior of chemically amplified resist defects in TMAH solution", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473419
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KEYWORDS
Particles

Ultraviolet radiation

Absorption

Semiconducting wafers

Absorption filters

Chemically amplified resists

Microfluidics

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