16 July 2002 Compact formulation of mask error factor for critical dimension control in optical lithography
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Abstract
This paper introduces a compact but rigorous theoretical formulation of the mask error factor. The results compare favorably to experimental data as well as to first-principle simulations. This work provides an insight into the MEF causes, and it explores its dependency on process settings in order to control critical dimension (CD) variation.
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Haolin Zhang, Haolin Zhang, Jason P. Cain, Jason P. Cain, Costas J. Spanos, Costas J. Spanos, } "Compact formulation of mask error factor for critical dimension control in optical lithography", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473483; https://doi.org/10.1117/12.473483
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