16 July 2002 Compact formulation of mask error factor for critical dimension control in optical lithography
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Abstract
This paper introduces a compact but rigorous theoretical formulation of the mask error factor. The results compare favorably to experimental data as well as to first-principle simulations. This work provides an insight into the MEF causes, and it explores its dependency on process settings in order to control critical dimension (CD) variation.
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Haolin Zhang, Haolin Zhang, Jason P. Cain, Jason P. Cain, Costas J. Spanos, Costas J. Spanos, "Compact formulation of mask error factor for critical dimension control in optical lithography", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473483; https://doi.org/10.1117/12.473483
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