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16 July 2002 Comparison of measured optical image profiles of silicon lines with two different theoretical models
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Abstract
In this paper, we describe a new method for the separation of tool-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool and sample errors in the measured optical intensity profiles and to obtain the best estimate of the correct intensity profile for a given sample geometry. This most accurate profile is then compared to calculated profiles from two different theoretical models. We explain the modeling in some detail when it has not been previously published.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard M. Silver, Ravikiran Attota, M. Stocker, Jau-Shi Jay Jun, Egon Marx, Robert D. Larrabee, Beth Russo, and Mark P. Davidson "Comparison of measured optical image profiles of silicon lines with two different theoretical models", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473479
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