16 July 2002 Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution
Author Affiliations +
Abstract
We present 3-dimensional atomic force profiler (AFP) measurements on die-scale flatness after copper and STI CMP. True metrology is achieved for patterned wafers. Wafers are vacuum-mounted on a flat chuck, as they would be in a stepper, so wafer warpage and strain-related non-planarity are not present. The results of this new technique are compared against current measurement techniques. For logic, memory and System-on-a-chip, we discuss the implications of wafer planarity going into subsequent photolithography steps.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kirk Miller, Kirk Miller, David H. Fong, David H. Fong, Dean J. Dawson, Dean J. Dawson, Bradley Todd, Bradley Todd, } "Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473527; https://doi.org/10.1117/12.473527
PROCEEDINGS
5 PAGES


SHARE
Back to Top