16 July 2002 Proximity effect correction optimization considering fogging and loading effects compensation
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Abstract
Recently, the interest in enhancement of critical dimension (CD) accuracy has been significantly increased to satisfy requirements of sub 100nm devices. Proximity effect correction becomes an indispensable choice to improve CD accuracy within local area, and fogging and loading effects compensation has been tried to enhance global CD uniformity. However, proximity effect correction (PEC) parameters obtained without considering additional exposure such as fogging effect and the exposure to compensate it are not appropriate to fabricate real devices. In this paper, we investigated the relation of PEC parameters and various pattern densities and additional exposure experientially, analyzed theoretically using the edge image model to describe absorbed energy. Through evaluations, we could optimize proximity effect correction parameters for EBM-3500 taking additional exposure into account, and realize higher CD accuracy in mask fabrication.
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Seung-Hune Yang, Yo-Han Choi, Jong Rak Park, Yong-Hoon Kim, Seong-Woon Choi, Jung-Min Sohn, "Proximity effect correction optimization considering fogging and loading effects compensation", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473426; https://doi.org/10.1117/12.473426
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KEYWORDS
Critical dimension metrology

Beam shaping

Etching

Backscatter

Mask making

Cadmium

Electron beam lithography

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