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21 May 1984 A High Sensitivity Two Layer Resist Process For Use In High Resolution Optical Lithography
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Abstract
A two layer resist process has been developed with a 7x reduction in pattern transfer exposure time compared to the "conventional" process that uses PMMA as the bottom layer. The reduction in exposure time was achieved by using a high sensitivity resist as the bottom layer. The pattern transfer wavelength is 310 nm, therefore a dye is needed in the top layer to make it highly absorbtive at 310 nm. This paper will describe the selection process for the dye, resist materials, and details of the process development. Examples of resist patterns will include a demonstration of the effect of partial transmission in the top layer on bottom layer patterns. It will be shown that a transmission of < 0.5% is re-quired for artifact free resist Patterns.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. P.C. Watts "A High Sensitivity Two Layer Resist Process For Use In High Resolution Optical Lithography", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941770
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