24 July 2002 157-nm single-layer resists based on advanced fluorinated polymers
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Abstract
Various polymer structures for 157-nm lithography have been vigorously developed for post 193-nm lithography. Polymers with a fluorinated main chain can improve high transparency at the 157-nm wavelength; conversely, norbornene copolymers with fluoride pendant groups do not achieve so high transparency at the 157-nm wavelength. We have developed a novel 157-nm chemically amplified resist. It is composed of a fluorinated monocyclic main-chain polymer, which shows high transparency and can be used for single layer resists. This new resist is referred to as a Small Absorbance Fluorine contAining ResIst (SAFARI). The SAFARI resist exhibited high-resolution patterns of 65-nm line and space patterns using a 0.85 NA microstepper, good sensitivity of 4 mJ/cm2, and high transparency when applied to 250-nm film thickness.
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Naomi Shida, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, Minoru Toriumi, Toshiro Itani, "157-nm single-layer resists based on advanced fluorinated polymers", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474247; https://doi.org/10.1117/12.474247
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