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24 July 2002 Advances in resists for 157-nm microlithography
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The synthesis and characterization of several new fluoropolymers designed for use in the formulation of photoresists for exposure at 157 nm will be described. The design of these resist platforms is based on learning from previously reported fluorine-containing materials. We have continued to explore anionic polymerizations, free radical polymerizations, metal-catalyzed addition polymerizations and metal-catalyzed copolymerizations with carbon monoxide in theses studies. The monomers were characterized by vacuum-UV (VUV) spectrometry and polymers characterized by variable angle spectroscopic ellipsometry (VASE). Resist formulations based on these polymers were exposed at the 157 nm wavelength to produce high-resolution images. The synthesis and structures of these new materials and the details of their processing will be presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian C. Trinque, Brian Philip Osborn, Charles R. Chambers, Yu-Tsai Hsieh, Schuyler Boon Corry, Takashi Chiba, Raymond Jui-Pu Hung, Hoang Vi Tran, Paul Zimmerman, Daniel Miller, Will Conley, and C. Grant Willson "Advances in resists for 157-nm microlithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002);

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