Application of diluted developer solution (DDS) process to 193-nm photolithography process

Keiichi Tanaka; Hiroyuki Iwaki; Yoshiaki Yamada; Yukio Kiba; Shigenori Kamei; Kazuyuki Goto

doi:10.1117/12.474256

24 July 2002 Application of diluted developer solution (DDS) process to 193-nm photolithography process

Keiichi Tanaka, Hiroyuki Iwaki, Yoshiaki Yamada, Yukio Kiba, Shigenori Kamei, Kazuyuki Goto

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474256
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Along with the trend of reducing the critical dimension in photolithography, exposure wavelength has been shortened from 248nm to 193nm. Resin structures of resist including their chemical characteristics have been altered from PHS to acrylate polymer. On the other hand, 2.38wt% TMAH developer solution is widely used, which was optimized at the time of 436nm resist process. However, since the resist backbone and chemical characteristics of 193nm resist are different from that of 436nm resist. So, TMAH concentration of 2.38wt% is not necessarily the best value for 193nm process and may even worsen the process latitude. Therefore, we have studied improvement of the process latitude such as CD uniformity, pattern defect, and dissolution mechanism of 193nm resist in developer solution, by applying Diluted Developer Solution (DDS) on 193nm resist process.

Citation Download Citation

Keiichi Tanaka, Hiroyuki Iwaki, Yoshiaki Yamada, Yukio Kiba, Shigenori Kamei, and Kazuyuki Goto "Application of diluted developer solution (DDS) process to 193-nm photolithography process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474256

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