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24 July 2002 Contact hole patterning performance of ArF resist for 0.10 μm technology node
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Abstract
For the fabrication of IC devices, the patterning of C/H (contact holes) is essential but very difficult in comparison with L/S (lines and spaces). 193nm lithography following KrF lithography is expected to play a main role in 0.1micrometers technology node. However, many lithographers have reported various troubles such as poor profiles, resist shrinkage, and pattern edge roughness due to inherent flaws of ArF resist materials. In this study, we noticed such complex issues relating to patterning C/H and evaluated two resists (acrylate, ROMA), which are promising materials among ArF resists, at the condition of various baking temperatures of the soft bake and the post exposure bake. And then we investigated lithographic capability (resolution limit, exposure latitude, depth of focus, and CD uniformity) at the optimum bake conditions. Besides, the resist flow properties were estimated on both resists, respectively. Throughout experimentals, we were able to observe ArF resist properties for bake conditions and find optimum temperatures to improve several issues occurred on C/H pattern. Thus we directly achieved 0.12~0.10 micrometers C/H and also decade- nanometer C/H by applying the resist flow process.
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Jin-Soo Kim, Jae Chang Jung, Keun-Kyu Kong, Geunsu Lee, Sung-Koo Lee, Young-Sun Hwang, and Ki-Soo Shin "Contact hole patterning performance of ArF resist for 0.10 μm technology node", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474258
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