Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process

Cha-Won Koh; Jin-Soo Kim; Chang-Il choi; Tae-Seung Eom; Won-Taik Kwon; Jae Chang Jung; Cheol-Kyu Bok; Ki-Soo Shin

doi:10.1117/12.474280

24 July 2002 Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process

Cha-Won Koh, Jin-Soo Kim, Chang-Il choi, Tae-Seung Eom, Won-Taik Kwon, Jae Chang Jung, Cheol-Kyu Bok, Ki-Soo Shin

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474280
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

We can print the contact hole pattern beyond the optical resolution limit using resist flow process. But its application has not strong point for the layer having various kinds of contact hole size and duty ratio according to x-axis or y-axis. Nevertheless, for the mass production of sub-150nm design rule device with KrF lithography using resist flow process, moderate shrink bias of below 40nm is required because the CD uniformity gets worse as the shrink bias gets larger by the influence of the hotplate dependency. We developed novel technology of shrinking contact hole using chemically amplified resist. It is generally known that the chemically amplified resist have t- top profile or larger line width when it has too much post exposure delay time at high amine concentration. Using this phenomenon, we intentionally treated amine of hexamethyl disilazane between exposure step and post exposure bake step, so we got smaller contact hole. Pattern profile of contact holes obtained by CONPEAT(CONtact hole resolution enhancement by Post Exposure Amine Treatment) process was fine. The contact size was 190nm with normal process and it was shrunk to 150nm using CONPEAT process. In this paper, we report the novel contact hole shrinkage technology of CONPEAT process. Its process feasibility was studied considering pattern fidelity, shrink bias and CD uniformity. We also introduce the experimental results of super contact hole shrinkage process using both contact hole shrinkage technology of CONPEAT process and resist flow process simultaneously.

Citation Download Citation

Cha-Won Koh, Jin-Soo Kim, Chang-Il choi, Tae-Seung Eom, Won-Taik Kwon, Jae Chang Jung, Cheol-Kyu Bok, and Ki-Soo Shin "Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474280

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photoresist processing

Critical dimension metrology

Semiconducting wafers

Chemically amplified resists

Resolution enhancement technologies

Optical lithography

Lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years