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24 July 2002 Dissolution inhibitors for 157-nm microlithography
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Abstract
Fluorocarbon based polymers have been identified as promising resist candidates for 157nm material design because of their relatively high transparency at this wavelength. This paper reports our recent progress toward developing 157nm resist materials based on transparent dissolution inhibitors. These 2 component resist systems have been prepared and preliminary imaging studies at 157nm are described. Several new approaches to incorporating these transparent monomers into functional polymers have been investigated and are described. The lithographic performance of some of these polymers is discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Daniel A. Miller, Charles R. Chambers, Brian Philip Osborn, Raymond Jui-Pu Hung, Hoang Vi Tran, Brian C. Trinque, Matthew J. Pinnow, Takashi Chiba, Scott McDonald, Paul Zimmerman, Ralph R. Dammel, Andrew R. Romano, and C. Grant Willson "Dissolution inhibitors for 157-nm microlithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474282
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