24 July 2002 Dissolution rate measurements for resist processing in supercritical carbon dioxide
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Abstract
A dissolution rate monitor (DRM) was successfully constructed to study the behavior of thin photoresist films undergoing the dissolution process in supercritical carbon dioxide (SCCO2). The DRM is based on the principles of interferometry but requires special modifications to the processing vessel to allow for the passage of transmitted and reflected He-Ne laser light. Dissolution rates obtained agree well with independent profilometric measurements of film thickness loss. We found that for block and random copolymers of THPMA-F7MA, dissolution rates vary with film thickness, slowing down considerably towards the silicon surface. This behavior was also observed in TBMA-F7MA random copolymers.
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Victor Quan Pham, Gina L. Weibel, Nagesh G. Rao, Christopher Kemper Ober, "Dissolution rate measurements for resist processing in supercritical carbon dioxide", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474241; https://doi.org/10.1117/12.474241
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