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24 July 2002 E-beam curing effects on the etch and CD-SEM stability of 193-nm resists
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Electron beam (e-beam) curing techniques are known to improve etch and CD-SEM stability of 248 and 193nm resists. The effects of three different e-beam curing processes (standard, LT and ESC) on the methacrylate and hybrid type 193nm resists were studied with respect to resin chemistry changes, resist film shrinkage, pattern profiles, etch rates, and CD SEM stability. Both methacrylate and hybrid type 193nm resists lose carbonyl groups from the resins, with possibly a reduction in the free volume leading to improved etch resistance/selectivity. Methacrylate resist films shrink ca. 22-24% and hybrid resist films shrink ca. 23-27%. The LT process shrinks the least compared to the ESC and standard process. The ESC and LT processes were found to stabilize the patterns uniformly compared to the standard process. Etch rate, selectivity and resist surface roughness after etch of both methacrylate and hybrid resists were improved using the e-beam curing process. E-beam curing drastically reduces the CD SEM shrinkage (from ca. 15% to 2- 5%); however, considerable shrinkage occurs during the curing process itself.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munirathna Padmanaban, Eric L. Alemy, Ralph R. Dammel, Woo-Kyu Kim, Takanori Kudo, Sang-Ho Lee, Douglas S. McKenzie, Aldo Orsi, Dalil Rahman, Wan-Lin Chen, Reza M. Sadjadi, William R. Livesay, and Matthew F. Ross "E-beam curing effects on the etch and CD-SEM stability of 193-nm resists", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002);

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