24 July 2002 E-beam curing effects on the etch and CD-SEM stability of 193-nm resists
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Abstract
Electron beam (e-beam) curing techniques are known to improve etch and CD-SEM stability of 248 and 193nm resists. The effects of three different e-beam curing processes (standard, LT and ESC) on the methacrylate and hybrid type 193nm resists were studied with respect to resin chemistry changes, resist film shrinkage, pattern profiles, etch rates, and CD SEM stability. Both methacrylate and hybrid type 193nm resists lose carbonyl groups from the resins, with possibly a reduction in the free volume leading to improved etch resistance/selectivity. Methacrylate resist films shrink ca. 22-24% and hybrid resist films shrink ca. 23-27%. The LT process shrinks the least compared to the ESC and standard process. The ESC and LT processes were found to stabilize the patterns uniformly compared to the standard process. Etch rate, selectivity and resist surface roughness after etch of both methacrylate and hybrid resists were improved using the e-beam curing process. E-beam curing drastically reduces the CD SEM shrinkage (from ca. 15% to 2- 5%); however, considerable shrinkage occurs during the curing process itself.
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Munirathna Padmanaban, Munirathna Padmanaban, Eric L. Alemy, Eric L. Alemy, Ralph R. Dammel, Ralph R. Dammel, Woo-Kyu Kim, Woo-Kyu Kim, Takanori Kudo, Takanori Kudo, Sang-Ho Lee, Sang-Ho Lee, Douglas S. McKenzie, Douglas S. McKenzie, Aldo Orsi, Aldo Orsi, Dalil Rahman, Dalil Rahman, Wan-Lin Chen, Wan-Lin Chen, Reza M. Sadjadi, Reza M. Sadjadi, William R. Livesay, William R. Livesay, Matthew F. Ross, Matthew F. Ross, } "E-beam curing effects on the etch and CD-SEM stability of 193-nm resists", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474262; https://doi.org/10.1117/12.474262
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