In a photolithography process, it is vital to control Critical Dimension (CD) within wafer. In the current process, although parameters are controlled during post-exposure bake (PEB) and development, only film thickness is checked before exposure for the CD control. However, as the fine patterning by using chemically amplified resist (CAR) has progressed, CD control within wafer has been affected by very small changes of protecting groups; distribution of additives (PAG, quencher etc.) concentrations, and solvent concentrations, thus it has become more important to control film compositions = film properties before exposure. Following by CD variations within wafer caused by air flow in Post applied Bake (PAB) chamber, we examined evaluation methods of KrF resist film properties and made various evaluations of unexposed film after PAB. This paper describes correlation between CD and PAG, quencher, and solvent concentration; consideration of CD variations mechanism based on the correlation data; and problems when shifting to the next generation process.