Evolution of a 193-nm bilayer resist for manufacturing

Ranee W. Kwong; Mahmoud Khojasteh; Margaret C. Lawson; Timothy Hughes; Pushkara Rao Varanasi; William R. Brunsvold; Robert D. Allen; Phillip J. Brock; Ratnam Sooriyakumaran; Hoa D. Truong; Arpan P. Mahorowala; David R. Medeiros

doi:10.1117/12.474239

24 July 2002 Evolution of a 193-nm bilayer resist for manufacturing

Ranee W. Kwong, Mahmoud Khojasteh, Margaret C. Lawson, Timothy Hughes, Pushkara Rao Varanasi, William R. Brunsvold, Robert D. Allen, Phillip J. Brock, Ratnam Sooriyakumaran, Hoa D. Truong, Arpan P. Mahorowala, David R. Medeiros

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474239
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

As 193 nm resist moves into production with minimum feature sizes approaching 100nm, bilayer resist is being evaluated more closely for certain applications. Our polymer design has been evolving to meet tighter outgassing requirements. Optical density, etch resistance and dissolution behavior are other considerations. The protecting group used in our 248 nm bilayer is not useful for 193 nm lithography because of the high optical density contribution from Si-Si linkage. Silicon was incorporated into a COMA platform for the first generation polymer. Maleic anhydride is used to modulate dissolution characteristics. The first generation 193 nm bilayer was optimized to print 120 nm L/S patterns with an attenuated PSM on a 0.6 NA Nikon S302. We will describe next generation platforms that address silicon outgassing concern. The lithographic performance of these resists was evaluated on a 0.6 NA Nikon S302 with a dark field mask. Results for 280nm pitch (1:1 L/S) and 245 nm pitch (105 nm L, 140 nm S) lithography are presented. Also shown is result for a 245 nm pitch (1:1 L/S) and 210 nm pitch (1:1 L/S) on a 0.75 NA ASML PAS 5500/1100. Outgassing data generated at MIT Lincoln Laboratory will be discussed.

Citation Download Citation

Ranee W. Kwong, Mahmoud Khojasteh, Margaret C. Lawson, Timothy Hughes, Pushkara Rao Varanasi, William R. Brunsvold, Robert D. Allen, Phillip J. Brock, Ratnam Sooriyakumaran, Hoa D. Truong, Arpan P. Mahorowala, and David R. Medeiros "Evolution of a 193-nm bilayer resist for manufacturing", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474239

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available