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24 July 2002 Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance
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Abstract
Incorporating fullerene into DNQ novolak resist provides a 60 percent reduction in the ECR plasma etch rate in a hydrogen/argon plasma. The reduction in plasma etch rate was also accompanied by a 5 degree(s)C increase in the pattern flow temperature. Plasma etch resistance was added to the photoresist after pattern exposure. Fullerene incorporation was accomplished by pattern development in a C60 /tetra-methyl ammonium hydroxide (TMAH) solution.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. David Benson, Andrew J. Stoltz Jr., Andrew W. Kaleczy, and John H. Dinan "Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474200
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