24 July 2002 Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists
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Abstract
We have studied 193 nm contact hole resists in view of resist components, process conditions and optical settings. Sidewall roughness was improved by optimizing photoacid generators. Side lobes were eliminated by applying higher post exposure bake temperature or modification of polymers. The influence of optical settings, types of masks and mask bias was discussed with simulation and lithographic results and guidelines for better resolution and iso-dense bias were proposed. The optimized formulation, AZAX1050P has a high resolution combined with a large depth of focus and an iso- dense overlap window (130 nm(NA=0.63) DOF 0.38micrometers Exposure latitude 10%).
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Takanori Kudo, Takanori Kudo, Eric L. Alemy, Eric L. Alemy, Ralph R. Dammel, Ralph R. Dammel, Woo-Kyu Kim, Woo-Kyu Kim, Sang-Ho Lee, Sang-Ho Lee, Seiya Masuda, Seiya Masuda, Douglas S. McKenzie, Douglas S. McKenzie, Dalil Rahman, Dalil Rahman, Andrew R. Romano, Andrew R. Romano, Munirathna Padmanaban, Munirathna Padmanaban, Jun-Sung Chun, Jun-Sung Chun, Jae Chang Jung, Jae Chang Jung, Sung-Koo Lee, Sung-Koo Lee, Ki-Soo Shin, Ki-Soo Shin, Hyeong-Soo Kim, Hyeong-Soo Kim, } "Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474214; https://doi.org/10.1117/12.474214
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