Modeling of acid catalyzed resists with electron beam exposure

Theodore H. Fedynyshyn; Jason R. Gillman; Russell B. Goodman; Theodore M. Lyszczarz; Steven J. Spector; Donna Lennon; Sandy Denault; Robert H. Bates

doi:10.1117/12.474190

24 July 2002 Modeling of acid catalyzed resists with electron beam exposure

Theodore H. Fedynyshyn; Jason R. Gillman; Russell B. Goodman; Theodore M. Lyszczarz; Steven J. Spector; Donna Lennon; Sandy Denault; Robert H. Bates;

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Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474190
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The aggressive scaling in critical dimensions, coupled with the increasing use of subresolution features in optical proximity correction (OPC), dictates that maskwriters should have at their disposal electron beam resists capable of printing 100-nm OPC features on 280-nm design rule masks (70-nm features on the wafer). There is a need to survey commercial chemically amplified resists for use as mask making resists, and for completeness, such a survey would require that each resist be compared with an optimized resist process. To accomplish this task in a acceptable time period we have chosen to perform electron beam lithography modeling to quickly identify the resist process combinations that will lead to superior resist performance. We have used the technique of combining electron beam resist modeling with lithography to screen chemically amplified resists for use in electron beam mask making. This was accomplished by comparing experimentally determined resist sensitivities and profiles with those predicted from ProBeam /3D lithography modeling software.

Citation Download Citation

Theodore H. Fedynyshyn, Jason R. Gillman, Russell B. Goodman, Theodore M. Lyszczarz, Steven J. Spector, Donna Lennon, Sandy Denault, Robert H. Bates, "Modeling of acid catalyzed resists with electron beam exposure", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474190; https://doi.org/10.1117/12.474190

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