24 July 2002 Nanostructure patterns for Shipley SPR505A resist using PRIME process
Author Affiliations +
Top Surface Imaging (TSI) is a well-established technique to improve resolution for optical, ultraviolet (UV) and e-beam lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high resolution single layer lithography system incorporating electron beam exposure, silylation and dry development. In this paper, modeling of nanostructures down to 30nm using PRIME with 0.5micrometers thick Shipley SPR505A resist are presented. The simulated profiles have been found to correlate closely with the published experimental data. Moreover, the liquid-phase silylation process step in PRIME has been experimentally characterised using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry as well as cross-sectional SEM and TEM. The impact of different silylating agents on SPR505A is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50(mu) C/cm2 at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using Hexamethylcyclotrisilazane (HMCTS) was found to be the highest (11:1) in comparison with other two silylating agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khalil I. Arshak, Khalil I. Arshak, Miroslav Mihov, Miroslav Mihov, Arousian Arshak, Arousian Arshak, Declan McDonagh, Declan McDonagh, Michael Pomeroy, Michael Pomeroy, Simon Newcomb, Simon Newcomb, } "Nanostructure patterns for Shipley SPR505A resist using PRIME process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474177; https://doi.org/10.1117/12.474177

Back to Top