24 July 2002 Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)
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Abstract
In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed).
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Murielle Charpin, Laurent Pain, Serge V. Tedesco, C. Gourgon, A. Andrei, Daniel Henry, Yves LaPlanche, Ryotaro Hanawa, Tadashi Kusumoto, Masumi Suetsugu, H. Yokoyama, "Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474193; https://doi.org/10.1117/12.474193
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