24 July 2002 Novel surface silylation process for chemically amplified photoresist
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Abstract
A vapor phase silylation process after wet development allows a patterned resist film to have etch resistance similar to that of bi-layer resist. In our study, the mixture of dimethylsilyldimethylamine(DMSDMA) and bis(dimethylamino)methylsilane(B(DMA)MS) was used as a silylation agent. DMSDMA was an effective silylation agent providing silicon compound quickly into resist film and also, had a role of improving the line edge roughness (LER) of resist pattern profile. Bi(DMA)MS, was added as a cross linker to prevent the resist flow due to the drop of glass transition temperature(Tg) of the resist film during silylation. Thermally stable silylated resist pattern was baked at 160 degree(s)C in order to control critical dimension(CD) bias generated by volume expansion during silylation, without desilylation arising at the typical silylation process using DMSMA.
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Sung-Ho Lee, Sung-Ho Lee, Jin Hong, Jin Hong, Sang-Gyun Woo, Sang-Gyun Woo, Hang-Goo Cho, Hang-Goo Cho, Woo-Sung Han, Woo-Sung Han, } "Novel surface silylation process for chemically amplified photoresist", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474176; https://doi.org/10.1117/12.474176
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