Organoelement resists for EUV lithography

Junyan Dai; Christopher Kemper Ober; Lin Wang; Franco Cerrina; Paul F. Nealey

doi:10.1117/12.474197

24 July 2002 Organoelement resists for EUV lithography

Junyan Dai, Christopher Kemper Ober, Lin Wang, Franco Cerrina, Paul F. Nealey

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474197
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

EUV lithography is perhaps the most promising of the NGL technologies for sub-100nm resolution. To address needs in this area, we have designed and synthesized several types of organoelement resists using only low absorbing elements, including H, C, Si and B. One category is based on silicon-containing block and random polymers. They show high transparency according to theoretical simulations and have high oxygen reactive ion etch resistances compared to Novolac resins. In a preliminary study, we were able to image these polymers to 180 nm line/space patterns using EUV exposure. A second type of EUV transparent resist platform involves boron-containing polymers. Carborane carboxylic acid was attached to a copolymer backbone to introduce boron atoms with controlled attachment level. It was found that incorporation of a small amount of B provides remarkably high oxygen etch resistance.

Citation Download Citation

Junyan Dai, Christopher Kemper Ober, Lin Wang, Franco Cerrina, and Paul F. Nealey "Organoelement resists for EUV lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474197

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