24 July 2002 Pattern transfer processes for 157-nm lithography
Author Affiliations +
Abstract
We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiro Miyoshi, Seiro Miyoshi, Takamitsu Furukawa, Takamitsu Furukawa, Hiroyuki Watanabe, Hiroyuki Watanabe, Shigeo Irie, Shigeo Irie, Toshiro Itani, Toshiro Itani, } "Pattern transfer processes for 157-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474221; https://doi.org/10.1117/12.474221
PROCEEDINGS
12 PAGES


SHARE
Back to Top