24 July 2002 Performance of vinyl ether cross-linkers on resist for 193-nm lithography
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Abstract
A three-component positive working resist composed of an acrylate polymer, vinyl ether cross-linker, and photoacid generator was evaluated for vacuum UV lithography. The vinyl ether cross-linker using tricyclodecyl group of alicyclic compound has a high transparency. This resist system shows a relatively high sensitivity and has a good profiling by irradiation using 193 nm light from an ArF excimer laser. Moreover, we found that these cross-linking type resists have advantages with respect to its resist properties such as the acid diffusion and the dry etching resistance.
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JongSoo Lee, JongSoo Lee, Hideo Suzuki, Hideo Suzuki, Keisuke Odoi, Keisuke Odoi, Nobukazu Miyagawa, Nobukazu Miyagawa, Shigeru Takahara, Shigeru Takahara, Tsuguo Yamaoka, Tsuguo Yamaoka, } "Performance of vinyl ether cross-linkers on resist for 193-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474254; https://doi.org/10.1117/12.474254
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