24 July 2002 Resist develop prediction by Monte Carlo simulation
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Abstract
Various resist develop models have been suggested to express the phenomena from the pioneering work of Dill's model in 1975 to the recent Shipley's enhanced notch model. The statistical Monte Carlo method can be applied to the process such as development and post exposure bake. The motions of developer during development process were traced by using this method. We have considered that the surface edge roughness of the resist depends on the weight percentage of protected and de-protected polymer in the resist. The results are well agreed with other papers. This study can be helpful for the developing of new photoresist and developer that can be used to pattern the device features smaller than 100 nm.
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Dong-Soo Sohn, Dong-Soo Sohn, Kyoung-Ah Jeon, Kyoung-Ah Jeon, Young-Soo Sohn, Young-Soo Sohn, Hye-Keun Oh, Hye-Keun Oh, } "Resist develop prediction by Monte Carlo simulation", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474172; https://doi.org/10.1117/12.474172
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