Selected implications of photoresist processing in 300mm manfacturing

Kay Lederer; Steffen R. Hornig; Ralf Schuster

doi:10.1117/12.474162

Abstract

In our paper, we discuss implications currently relevant to 300mm resist processing in lithography. The large size of the wafers, and therefore the large volume of machine modules and media within these modules, demand tighter specifications and a careful re-consideration of design. Firstly, we investigated a novel resist development process based on a new developer dispense nozzle. The CD uniformity across the 300mm wafer thus achieved is compared to a common process. Based on this, we are able to make a preliminary recommendation for the photoresist development technology required for future, high-end semiconductor device manufacturing. Resist thickness fluctuations around the edge area of a silicon wafer typically occur if high spin speeds are applied during the photoresist coating process. 300mm coating processes are particularly prone to the occurrence of such spin marks as the operating range of applicable spin speeds is lower in comparison to processes applied to wafers of lower diameters. We show in our example how such local resist thickness fluctuations impact the product yield. Finally, a special type of micromasking defect was found to be particularly relevant to 300mm lithography layers. This doughnut-type defect detracts the yield of the semiconductor product. The defect has a distinct physical appearance and is precipitated onto the wafer as a hollow resin sphere. This defect has not yet been observed on our 200mm reference process. The occurrence of the defect directly depends on the matching of the air flows entering and leaving the 300mm coater cup. The mechanism of formation involves the presence of a photoresist-solvent aerosol.

Citation Download Citation

Kay Lederer, Kay Lederer, Steffen R. Hornig, Steffen R. Hornig, Ralf Schuster, Ralf Schuster, } "Selected implications of photoresist processing in 300mm manfacturing", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474162; https://doi.org/10.1117/12.474162

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