24 July 2002 Sub-100 nm T-gates utilizing a single E-beam lithography exposure process
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Abstract
Sub 100 nm T-gate structures have been produced using a tri- level resist stack modified from previously published results utilizing ZEP7000A, PMGI and ZEP520A positive e-beam resists. The new resist stack replaces the top resist with the more sensitive ZEP7000A from Zeon Chemical. The does sensitivity of the ZEP1000A is an order of magnitude higher than the ZEP520A. This difference provides the flexibility to create T-gate structures with larger top cross-sectional dimensions, which increase the transconductance. The technique can also be used to create other novel structures such as gamma-gates and small air bridges, by varying the dose on the different parts of a feature design to achieve the desired three-dimensional resist structure.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric S. Ainley, Eric S. Ainley, Scott Ageno, Scott Ageno, Kevin J. Nordquist, Kevin J. Nordquist, Douglas J. Resnick, Douglas J. Resnick, } "Sub-100 nm T-gates utilizing a single E-beam lithography exposure process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474192; https://doi.org/10.1117/12.474192
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