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24 July 2002 Ultrathin DUV resists for logic applications
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Ultrathin ESCAP resists have been examined for logic applications in our paper. Lithographic studies have been carried out with these resists at the thickness of 60, 120 and 400 nm for contacts, and at the thickness of 250 vs 400nm for gate layer applications. A clear relationship between optimization of resist profile and film thickness through design of inhibited resists is shown. As the resist thickness is reduced to the UTR regime, more significantly inhibited resists are necessary. This effect is shown through the low Rmin values for XP1335 and the extreme surface inhibition built into the resist film. The benefits of UTR resists are multiple: larger overall process windows particularly with respect to exposure latitude, profile optimization through inhibition, and reduced pattern collapse effects. We can see dramatic differences in dissolution properties and solvent distribution below 120nm film thickness for the UTRs in this study. We attribute most of these differences due to solvent distribution effects which are more severe as the resist is thinned. It is well known from previous studies, that photogenerated acid and volatilized base profiles may be also affected by solvent depletion. There also is no dramatic change in photospeed as resist thickness is reduced.
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James W. Thackeray, James F. Cameron, Michael Francis Cronin, Wesley Brykailo, and Doris Kang "Ultrathin DUV resists for logic applications", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002);

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