30 July 2002 157-nm lithography with high numerical aperture lens for 70-nm technology node
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Abstract
l57nm lithography is being investigated for the sub-7Onm technology node of semiconductor devices. Many efforts have been reported on the exposure tool, the F2 laser, the resist materials, the resist processing and the mask materials1. A critical component for the success of this 157nm lithography is the availability of high numerical aperture (NA) lenses that lead to higher resolution capability and higher process margin. In this article, we describe our recent evaluation results of a high precision 157nm Microstepper with 0.85 NA lens combined with simulation analysis of the lithographic performance. The details of the evaluation results discussed here include the resolution limit of the high NA lens and the possible effects of intrinsic birefringence upon the lithographic performance.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshifumi Suganaga, Toshifumi Suganaga, Noriyoshi Kanda, Noriyoshi Kanda, J. Kim, J. Kim, Osamu Yamabe, Osamu Yamabe, Kunio Watanabe, Kunio Watanabe, Takamitsu Furukawa, Takamitsu Furukawa, Seiro Miyoshi, Seiro Miyoshi, Toshiro Itani, Toshiro Itani, Julian S. Cashmore, Julian S. Cashmore, Malcolm C. Gower, Malcolm C. Gower, } "157-nm lithography with high numerical aperture lens for 70-nm technology node", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474606; https://doi.org/10.1117/12.474606
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