30 July 2002 3D lumped parameter model for lithographic simulations
Author Affiliations +
Proceedings Volume 4691, Optical Microlithography XV; (2002); doi: 10.1117/12.474490
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States
Abstract
Simplified resist models are desired for fast simulation of resist profiles over large mask areas. The Lumped Parameter Model was originally developed as one such model. However, the LPM model has been limited to 2D resist simulations of 1D aerial image slices with positive tone resists. In this paper we present a modified Lumped Parameter Model applicable to 3D resist simulations of both positive and negative tone resists. In addition several new LPM parameters are introduced that further improve accuracy. The derivation of the 3D LPM model, rationale for including the new parameters, and simulation results using the new model are given.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff D. Byers, Mark D. Smith, Chris A. Mack, "3D lumped parameter model for lithographic simulations", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474490; https://doi.org/10.1117/12.474490
PROCEEDINGS
13 PAGES


SHARE
KEYWORDS
3D modeling

Photomasks

Lithography

Absorbance

3D image processing

Chemically amplified resists

Image segmentation

RELATED CONTENT


Back to Top