30 July 2002 Aberration sensitivity control for the isolation layer in low-k1 DRAM process
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Abstract
One of the crucial factors to take mostly into account the development and production of 130 nm node in low k1 DRAM process is the lens aberration sensitivity control of optical lithographic tools. To meet the required specification these impact of lens aberration resulting from reducing process window caused by pattern deformation, CD uniformity, CD asymmetry, and pattern shift etc. should be understood and considered. In this study, we mainly focused on the aberration sensitivity control for the DRAM isolation layer that is very sensitive to odd components such as coma and three-foil etc. There are a few methods to do this, but the application of extreme sigma setting that is the powerful manner to improvement of asymmetric pattern and layout rotation were examined. It was confirmed that the simulated image and real patterning results for left-right CD difference came from aberrated lens are well matched. In addition, why is the extreme sigma setting more effective than standard settings was investigated with analysis of diffraction patterns on pupil filling of projection lens optics combined with Zernike coefficients phase map.
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Byeong-Ho Cho, Donggyu Yim, Chan-Ha Park, Seung-Hyuk Lee, Hyun-Jo Yang, Jae-Hak Choi, Yong-Chul Shin, Choi-Dong Kim, Jae-Sung Choi, Khil-Ohk Kang, Sang-Wook Kim, Tae-Hwa Yu, Jong-Kyun Hong, Jung-Chan Kim, Min-Seob Han, Ho-Young Heo, Young-Dae Kim, Dong-Duk Lee, Gyu-Han Yoon, Jan B.P. van Schoot, Thomas Theeuwes, Young-Hong Min, "Aberration sensitivity control for the isolation layer in low-k1 DRAM process", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474633; https://doi.org/10.1117/12.474633
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