30 July 2002 Aberration sensitivity control for the isolation layer in low-k1 DRAM process
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One of the crucial factors to take mostly into account the development and production of 130 nm node in low k1 DRAM process is the lens aberration sensitivity control of optical lithographic tools. To meet the required specification these impact of lens aberration resulting from reducing process window caused by pattern deformation, CD uniformity, CD asymmetry, and pattern shift etc. should be understood and considered. In this study, we mainly focused on the aberration sensitivity control for the DRAM isolation layer that is very sensitive to odd components such as coma and three-foil etc. There are a few methods to do this, but the application of extreme sigma setting that is the powerful manner to improvement of asymmetric pattern and layout rotation were examined. It was confirmed that the simulated image and real patterning results for left-right CD difference came from aberrated lens are well matched. In addition, why is the extreme sigma setting more effective than standard settings was investigated with analysis of diffraction patterns on pupil filling of projection lens optics combined with Zernike coefficients phase map.
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Byeong-Ho Cho, Byeong-Ho Cho, Donggyu Yim, Donggyu Yim, Chan-Ha Park, Chan-Ha Park, Seung-Hyuk Lee, Seung-Hyuk Lee, Hyun-Jo Yang, Hyun-Jo Yang, Jae-Hak Choi, Jae-Hak Choi, Yong-Chul Shin, Yong-Chul Shin, Choi-Dong Kim, Choi-Dong Kim, Jae-Sung Choi, Jae-Sung Choi, Khil-Ohk Kang, Khil-Ohk Kang, Sang-Wook Kim, Sang-Wook Kim, Tae-Hwa Yu, Tae-Hwa Yu, Jong-Kyun Hong, Jong-Kyun Hong, Jung-Chan Kim, Jung-Chan Kim, Min-Seob Han, Min-Seob Han, Ho-Young Heo, Ho-Young Heo, Young-Dae Kim, Young-Dae Kim, Dong-Duk Lee, Dong-Duk Lee, Gyu-Han Yoon, Gyu-Han Yoon, Jan B.P. van Schoot, Jan B.P. van Schoot, Thomas Theeuwes, Thomas Theeuwes, Young-Hong Min, Young-Hong Min, } "Aberration sensitivity control for the isolation layer in low-k1 DRAM process", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474633; https://doi.org/10.1117/12.474633

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