Paper
30 July 2002 Challenges in high NA, polarization, and photoresists
Bruce W. Smith, Julian S. Cashmore
Author Affiliations +
Abstract
Optical lithography is being pushed into a regime of extreme-numerical aperture (extreme-NA). The implications of the nonscalar effects of high-NA lithography (above 0.50) have been discussed now for many years. This paper considers the consequences of imaging at numerical apertures above 0.70 with the oblique imaging angles required for low k1 lithography. A new scaling factor, kNA, is introduced to capture the impact of low k1 imaging combined with extreme-NA optics. Extreme-imaging is defined as k1 and kNA values approach 0.25. Polarization effects combined with resist requirements for extreme-NA are addressed, especially as they relate to 157 nm lithography. As these technologies are pursued, careful consideration of optical and resist parameters is needed. Conventional targets for resist index, absorption, diffusion, and reflectivity based on normal incidence imaging may not lead to optimum performance without these considerations. Additionally, methods of local and semi-local mask polarization are discussed using concepts of wire-grid polarizer arrays. Back-side and image-side polarization OPC methods are introduced.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce W. Smith and Julian S. Cashmore "Challenges in high NA, polarization, and photoresists", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474562
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Cited by 39 scholarly publications.
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KEYWORDS
Polarization

Absorption

Lithography

Diffusion

Refractive index

Monochromatic aberrations

Diffraction

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