30 July 2002 Comparison between the process windows calculated with full and simplified resist models
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Abstract
While numerical simulation is generally regarded as indispensable for wavefront engineering tasks such as OPC decoration and phase-shift mask design, full resist models are rarely used for this purpose. By full resist models, we mean models derived from a physical, mechanistic description of the chemical response of the photoresist to exposure and the subsequent PEB and develop processes. More often, simplified models such as an aerial image threshold model or the Lumped Parameter Model (LPM) are used because these models are much faster and make optimization of optical extension technology more tractable. Simplified resist models represent a compromise between computational speed and simulation accuracy. The purpose of this study is to quantify the differences between the process windows calculated with simplified and full resist models. Our approach is first to fit the parameters in the simplified models to match results obtained with a full resist model, and then to compare the predictions of the simplified resist models with those obtained with the full model. We take two approaches to model tuning: mathematical derivation of relationships between the models, and least-squares fitting of FE matrix data for isolated and dense lines.
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Mark D. Smith, Jeff D. Byers, Chris A. Mack, "Comparison between the process windows calculated with full and simplified resist models", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474501; https://doi.org/10.1117/12.474501
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