30 July 2002 Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100-nm node
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Abstract
Alternating aperture phase shifting mask (AAPSM) technology is finding increased use in the patterning of critical layers due to the enhanced resolution and decreased linewidth variation characteristic of this technique. The potential advantages of AAPSM processes must be weighed against the increased complexity of reticle layout, higher reticle cost, and heightened sensitivity to parameters such as lens aberration. This work details the effect of shifter trench depth on patterning performance for the 100nm node. Data was collected at an exposure wavelength of 193nm using reticles built with deliberate errors in shifter trench depth. Differences in patterning performance observed as a result of these variations are compared with the impact predicted from modeling.
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Kyle Patterson, Lloyd C. Litt, John G. Maltabes, Greg P. Hughes, Trish Robertson, B. Montgomery, "Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100-nm node", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474481; https://doi.org/10.1117/12.474481
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