30 July 2002 Impact of scanner tilt and defocus on CD uniformity across field
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Abstract
Gate critical dimension (CD) uniformity across field is a key parameter in total gate CD control; it is especially important for highly integrated microprocessor chip with large die size and high speed. Intensive study has been conducted to reveal the impact of scanner leveling tilt, defocus and illumination distribution on CD uniformity across field. Correspondingly CD in die range, vertical-horizontal CD bias, resist side wall angle and profile have all been characterized and monitored for each individual scanner. The monitoring methodology we have established enables us to maintain these CD parameters within fairly tight control range, and also provided efficient and accurate data on tool capability and marginality for running production.
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Shangting F. Detweiler, Shangting F. Detweiler, Simon Chang, Simon Chang, Sandra Zheng, Sandra Zheng, Patrick Gagnon, Patrick Gagnon, Christopher C. Baum, Christopher C. Baum, Mark A. Boehm, Mark A. Boehm, Jay M. Brown, Jay M. Brown, Catherine H. Fruga, Catherine H. Fruga, } "Impact of scanner tilt and defocus on CD uniformity across field", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474638; https://doi.org/10.1117/12.474638
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