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30 July 2002 Impact of synchronization errors on overlay and CD control
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Abstract
Quality of exposures on Step&Scan systems highly depends on stages synchronization. While scanning, wafer and reticle stages must have same relative speed (4x ratio) and directions. In this paper, we investigate the tolerance to lateral vibrations of 0.18micrometers and 0.12micrometers gate patterning respectively on an ASML PAS5500/750E scanner (KrF) and a PAS5500/900 scanner (ArF) exposure tools. Results should be given both on the MA impact on overlay and the MSD effect on CD control. But, as no adapted experimental method has been found to correlate overlay degradation to induced MA and then confirm the theory that 1nm of MA induces 1nm of translation, only results on CD control will be discussed, including lateral MSD impact on nominal CD variations, process latitudes degradations and intrafield CD dispersion. In particular, we will show that MSD effect on CD strongly differs from 248nm imaging process to 193nm one.
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Emmanuelle Luce, Sebastien Mougel, Pierre-Jerome Goirand, and Jerome Depre "Impact of synchronization errors on overlay and CD control", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474634
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