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30 July 2002 Integration using KrF and ArF resist materials in a full via first dual-damascene process scheme with CVD OSG low-k dielectric
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Abstract
Using a full via first (FVF) dual damascene (DD) scheme for copper processing with low-k dielectrics has presented many new challenges to the semiconductor industry. Among those challenges, for photolithography, resist poisoning at the trench level has been the most daunting. Resist and bottom anti-reflective coating (BARC) screenings for poisoning at the 0.13 micrometers and 0.10 micrometers technology nodes have been performed on a variety of KrF and ArF resist and BARC platforms using a simple semi-qualitative method. By varying resist parameters such as resin, photoacid generator (PAG), and solvent types, a lithographically suitable KrF resist is found for the 0.13 micrometers node with minimal sensitivity to poisoning. In addition, ArF resists and BARCs were screened for their sensitivity to poisoning for the 0.10 micrometers node. Suitable resist and BARC candidates are identified for preliminary use for the 0.10 micrometers node.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott W. Jessen, K. Steiner, Thomas M. Wolf, William D. Josephson, S. Lytle, Mitsuru Sato, Chung Yih Lee, and Ming Hui Fan "Integration using KrF and ArF resist materials in a full via first dual-damascene process scheme with CVD OSG low-k dielectric", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474632
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