30 July 2002 Is it possible to improve MEEF?
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As the design rule of device has shrunken, obtaining a feasible process window at low k1 factor in photolithography is the major concerning in order to shorten the total period from development to the mass production of devices. In this low k1 factor region, a tiny CD variation on mask might be increased abruptly on the wafer. In particular, such variation so called MEEF (Mask Error Enhancement Factor) is closely related with various types of process parameter. In this paper, we reviewed optimized process condition to minimize MEEF and defined uDoF (Usable Depth of Focus) considering a correlation between MEEF and DoF (Depth of Focus).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seok-Hwan Oh, Seok-Hwan Oh, Hyoungkook Kim, Hyoungkook Kim, Dae-Joung Kim, Dae-Joung Kim, Young-Seok Kim, Young-Seok Kim, Chun-Suk Suh, Chun-Suk Suh, Yong-Sun Koh, Yong-Sun Koh, Chang-Lyong Song, Chang-Lyong Song, } "Is it possible to improve MEEF?", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474522; https://doi.org/10.1117/12.474522


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