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30 July 2002 Model-based design improvements for the 100-nm lithography generation
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Abstract
Due to the challenging design rule and CD control requirements of the 100 nm device generation, a large number of complex patterning techniques are likely to be used for random logic devices. The complexity of these techniques places considerable strain upon model-based OPC software to identify and compensate for a wide range of printing non- idealities. Additionally, the rapidly increasing cost of advanced reticles has increased the urgency of obtaining reticles devoid of process limiting design or OPC errors. We have evaluated the capability of leading edge model-based OPC software to meet the challenging lithography needs of the 100 nm device generation. Specifically, we have implemented and verified model usefulness to correct for pattern deformation in complex binary gate, contact and via processes utilizing highly optimized illumination. Additionally, we present results showing the abilities of model-based methods to accurately find design related printing problems in complementary phase shift gate designs before they are committed to an expensive reticle.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin Lucas, Sergei V. Postnikov, Kyle Patterson, Chi-Min Yuan, Carla Nelson-Thomas, Matthew A. Thompson, Russell L. Carter, Lloyd C. Litt, Patrick K. Montgomery, and Karl Wimmer "Model-based design improvements for the 100-nm lithography generation", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474563
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