30 July 2002 New methods to calibrate simulation parameters for chemically amplified resists
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Abstract
In this paper we examine new models and the indispensability of model parameters of chemically amplified resists (CAR) for their usage in predictive process simulation. Based on a careful exploration of different modeling options we calibrate the model parameters with different experimental data. Furthermore, we investigate different modeling approaches: (1) Mode of coupling between diffusion and kinetic reactions, sequence of quencher base events (Hinsberg model); (2) Mode of diffusion: Fickian and linear diffusion model; (3) Development rate model: Performance of the Enhanced Notch model. The resulting models are evaluated with respect to their performance by comparing with experimental line-width for semidense (1-2, 1-1.6, 1-1.4, 1-1.2) and dense features, the bias between different features and full resist profiles. The investigations are applied to the Shipley resist UVTM 113. Finally, a parameter extraction procedure for chemically amplified resists is proposed.
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Bernd Tollkuehn, Andreas Erdmann, Niko Kivel, Stewart A. Robertson, Doris Kang, Steven G. Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, Wolfgang Hoppe, "New methods to calibrate simulation parameters for chemically amplified resists", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474497; https://doi.org/10.1117/12.474497
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