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30 July 2002 New resolution enhancement technology for manufacturing sub-100-nm technology
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Due to delays in the development of next generation lithography (NGL), extension of optical lithography has become the major trend in semiconductor manufacturing. As a result, various resolution enhancement techniques (RET's) are under development, especially for sub-100 nm node patterning. This paper introduces a concept of 100% transmission PSM (Chrome-Less Mask: CLM) for resolving some problems associated with previous approaches that used transparent phase-shift mask. This CLM technology has advantages for simple fabrication and high performance due to its improved resolution limit. However, owing to limited mask manufacturability and lack of proper techniques for converting the layout coupled with required illumination conditions, CLM application in real device is still in the development stage. Proper mask making technology in particular is a major issue. In this paper, we cover mask- making process, especially the quartz dry etch and defect engineering. With this mask-making technology, we made a test mask and evaluated its optical performance. It gave us enough depth of focus comparable to 8% att.PSM. We are going to evaluate the possibility of full chip application in our next experiment.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong-Hoon Chung, Jean-Young Park, Man-Ki Lee, In-Gyun Shin, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn, J. Fung Chen, and Douglas J. Van Den Broeke "New resolution enhancement technology for manufacturing sub-100-nm technology", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002);

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