OPC and image optimization using localized frequency analysis

Bruce W. Smith; Dale E. Ewbank

doi:10.1117/12.474509

30 July 2002 OPC and image optimization using localized frequency analysis

Bruce W. Smith, Dale E. Ewbank

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474509
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A method of assist feature OPC layout is introduced using a frequency model-based approach. Through low-pass spatial frequency filtering of a mask function, the local influence of zero diffraction energy can be determined. By determining isofocal intensity threshold requirements of an imaging process, a mask equalizing function can be designed. This provides the basis for frequency model-based assist feature layout. By choosing assist bar parameters that meet the requirements of the equalizing function, through-pitch focus and dose matching is possible for large two dimensional mask fields. The concepts introduced also lead to additional assist feature options and design flexibility.

Citation Download Citation

Bruce W. Smith and Dale E. Ewbank "OPC and image optimization using localized frequency analysis", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474509

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