OPC rectification of random space patterns in 193-nm lithography

Mosong Cheng; Andrew R. Neureuther; Keeho Kim; Z. Mark Ma; Won D. Kim; Maureen A. Hanratty

doi:10.1117/12.474512

30 July 2002 OPC rectification of random space patterns in 193-nm lithography

Mosong Cheng, Andrew R. Neureuther, Keeho Kim, Z. Mark Ma, Won D. Kim, Maureen A. Hanratty

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474512
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

This paper presents a methodology for modeling the space printability at the gate level in 193nm lithography. Spaces are shown to be more susceptible to process variations and lens aberrations than lines are. Experimental Scanning Electron Microscopy (SEM) pictures show that the scum and bridging effects can occur in spaces although all the line critical dimensions (CDs) are on target. A resist imaging model is used to simulate the line CDs through defocus, pitch and size, and the prediction error is within 5nm. However, this model can not reasonably predict space CDs without using variable threshold, which is explained a proposed trajectory dissolution rate model. Based on the dissolution model, a process rule checker is proposed which inspects the peak light intensity in a space and compares it with a given threshold. This condition is verified experimentally.

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Mosong Cheng, Andrew R. Neureuther, Keeho Kim, Z. Mark Ma, Won D. Kim, and Maureen A. Hanratty "OPC rectification of random space patterns in 193-nm lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474512

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KEYWORDS

Optical proximity correction

Critical dimension metrology

Cadmium sulfide

Process modeling

Scanning electron microscopy

Photomasks

Printing

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