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30 July 2002 Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches
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Abstract
The feasibility study to use high NA ArF lithography for 70 nm process development was done. After intensive simulation works, new forbidden-itch behavior of alternating PSM in low k1 imaging was found out. This forbidden pitch due to extremely small MEF and OPE of alternating PSM at small (sigma) . In order understand the mechanism and behavior of the forbidden-pitch, simulation and experiment were done as function of critical parameters of NA, (sigma) and wavelength. Solution to control forbidden-pitch for low k1 imaging of 70 nm has been address as critical item which needs to be overcome.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keeho Kim, Yong-Seok Choi, Robert John Socha, and Donis G. Flagello "Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474573
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